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Understanding the thermal conductivity of chromium-doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium-doped V2O3 across varying concentrations, spanning the doping-induced metal–insulator transition. In addition, different oxygen stoichiometries and film thicknesses were investigated in their crystalline and amorphous phases. Chromium doping concentration (0%–30%) and the degree of crystallinity emerged as the predominant factors influencing the thermal properties, while the effect of oxygen flow (600–1400 ppm) during deposition proved to be negligible. Our observations indicate that even in the metallic phase of V2O3, the lattice contribution is the dominant factor in thermal transport with no observable impact from the electrons on heat transport. Finally, the thermal conductivity of both amorphous and crystalline V2O3 was measured at cryogenic temperatures (80–450 K). Our thermal conductivity measurements as a function of temperature reveal that both phases exhibit behavior similar to amorphous materials, indicating pronounced phonon scattering effects in the crystalline phase of V2O3. 

Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical properties of components like filters, lenses, and beam steering devices could result in dramatic reductions in size, weight, and power consumption in future optoelectronic devices. Among the potential candidates for reconfigurable optics, chalcogenide‐based phase change materials (PCMs) offer great promise due to their non‐volatile and analogue switching characteristics. Although PCM have found widespread use in electronic data storage, these memory devices are deeply sub‐micron‐sized. To incorporate phase change materials into free‐space optical components, it is essential to scale them up to beyond several hundreds of microns while maintaining reliable switching characteristics. This study demonstrated a non‐mechanical, non‐volatile transmissive filter based on low‐loss PCMs with a 200 × 200 µm²switching area. The device/metafilter can be consistently switched between low‐ and high‐transmission states using electrical pulses with a switching contrast ratio of 5.5 dB. The device was reversibly switched for 1250 cycles before accelerated degradation took place. The work represents an important step toward realizing free‐space reconfigurable optics based on PCMs. 

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide‐based phase‐change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid‐state structural phases. Although significant efforts have been devoted to accurate simulation of PCM‐based devices, in this paper, three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices are highlighted: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid‐phase PCMs. The important topic of switching energy scaling in PCM devices, which also helps explain why the three above‐mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics, is further investigated. These findings offer insight to facilitate accurate modeling of PCM‐based photonic devices and can inform the development of more efficient reconfigurable optics. 

Abstract Amorphous chalcogenide alloys are key materials for data storage and energy scavenging applications due to their large non-linearities in optical and electrical properties as well as low vibrational thermal conductivities. Here, we report on a mechanism to suppress the thermal transport in a representative amorphous chalcogenide system, silicon telluride (SiTe), by nearly an order of magnitude via systematically tailoring the cross-linking network among the atoms. As such, we experimentally demonstrate that in fully dense amorphous SiTe the thermal conductivity can be reduced to as low as 0.10 ± 0.01 W m −1 K −1 for high tellurium content with a density nearly twice that of amorphous silicon. Using ab-initio simulations integrated with lattice dynamics, we attribute the ultralow thermal conductivity of SiTe to the suppressed contribution of extended modes of vibration, namely propagons and diffusons. This leads to a large shift in the mobility edge - a factor of five - towards lower frequency and localization of nearly 42% of the modes. This localization is the result of reductions in coordination number and a transition from over-constrained to under-constrained atomic network. 

Abstract Materials with tunable thermal properties enable on-demand control of temperature and heat flow, which is an integral component in the development of solid-state refrigeration, energy scavenging, and thermal circuits. Although gap-based and liquid-based thermal switches that work on the basis of mechanical movements have been an effective approach to control the flow of heat in the devices, their complex mechanisms impose considerable costs in latency, expense, and power consumption. As a consequence, materials that have multiple solid-state phases with distinct thermal properties are appealing for thermal management due to their simplicity, fast switching, and compactness. Thus, an ideal thermal switch should operate near or above room temperature, have a simple trigger mechanism, and offer a quick and large on/off switching ratio. In this study, we experimentally demonstrate that manipulating phonon scattering rates can switch the thermal conductivity of antiferroelectric PbZrO 3 bidirectionally by −10% and +25% upon applying electrical and thermal excitation, respectively. Our approach takes advantage of two separate phase transformations in PbZrO 3 that alter the phonon scattering rate in different manners. In this study, we demonstrate that PbZrO 3 can serve as a fast (<1 second), repeatable, simple trigger, and reliable thermal switch with a net switching ratio of nearly 38% from ~1.20 to ~1.65 W m −1 K −1 . 

Abstract Advancements in nanofabrication processes have propelled nonvolatile phase change materials (PCMs) beyond storage‐class applications. They are now making headway in fields such as photonic integrated circuits (PIC), free‐space optics, and plasmonics. This shift is owed to their distinct electrical, optical, and thermal properties between their different atomic structures, which can be reversibly switched through thermal stimuli. However, the reliability of PCM‐based optical components is not yet on par with that of storage‐class devices. This is in part due to the challenges in maintaining a uniform temperature distribution across the PCM volume during phase transformation, which is essential to mitigate stress and element segregation as the device size exceeds a few micrometers. Understanding thermal transport in PCM‐based devices is thus crucial as it dictates not only the durability but also the performance and power consumption of these devices. This article reviews recent advances in the development of PCM‐based photonic devices from a thermal transport perspective and explores potential avenues to enhance device reliability. The aim is to provide insights into how PCM‐based technologies can evolve beyond storage‐class applications, maintain their functionality, and achieve longer lifetimes. 

Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications, including sensing, imaging, telecommunications, and data storage. Chalcogenide‐based phase‐change materials (PCMs) have shown great promise due to their stable, nonvolatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. Herein, the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching is reported on, extending the operational lifetime of the device beyond 13000 switching events. To achieve this, a computer‐aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process is developed, thereby significantly enhancing the lifetime of these reconfigurable devices. The findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.